Can a Procedure for the Growth of Single‐layer Graphene on Copper be used in Different Chemical Vapor Deposition Reactors?

In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for growth of single-layer graphene (SLG). Despite scattering guidelines and procedures, variables such as surface texture/chemistry catalyst metal foils, carbon feedstock, process parameters have well-scrutinized. Still, questions remain on how best to standardize procedure. The possible correlation procedures between different CVD setups is an example. Here, two thermal reactors were grow Cu foil. design these was entirely distinct, one being a “showerhead” cold-wall type, whereas other represented popular “tubular” hot-wall type. Upon standardizing foil surface, it develop procedure cm2-scale SLG that differed only by carrier gas flow rate used in reactors.